DCK20C1200HB

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DCK20C1200HB - Littelfuse
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Краткое описание: 1200 V 2x10 A SiC Schottky Diode, Common Cathode, TO-247-3L
Производитель Littelfuse
Категория Дискретные полупроводники
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual common-cathode SiC Schottky rectifier for fast, low-loss switching: 1200 V rating, per‑leg IF(AV) 10 A (30 A at Tc=25°C), 72 A surge, Qc 62 nC, VF typ 1.48 V at 10 A, TJ up to 175°C; TO‑247‑3L.
MSL 1
RoHS Compliant
REACH SVHC declaration available from manufacturer
Pb-free Yes
Pin count 3
Device type Silicon Carbide (SiC) Schottky diode
Lead pitch e 5.45 (typical, TO‑247‑3L)mm
Configuration Dual, common cathode (2x)
Package length D 20.30 to 21.10mm
Pinout (TO‑247‑3L) 1=Anode, 2=Cathode, 3=Anode; Tab=Case
DC blocking voltage VDC 1200V
AEC‑Q101 qualification No
Package body thickness A 4.83 to 5.21mm
Mounting torque (M3 screw) 0.7Nm
Junction temperature range Tvj -55 to 175°C
Storage temperature range Tstg -55 to 175°C
Capacitance C at VR=1 V, f=1 MHz 575pF
Capacitance C at VR=400 V, f=1 MHz 59pF
Capacitance C at VR=800 V, f=1 MHz 42.5pF
Repetitive peak reverse voltage VRRM 1200V
Forward voltage VF at IF=10 A, Tj=175°C typ 2.0 (max 3.0)V
Reverse current IR at VR=1200 V, Tj=25°C typ 1, max 100µA
Reverse current IR at VR=1200 V, Tj=175°C typ 10, max 250µA
Forward voltage VF typ at IF=10 A, Tj=25°C 1.48 (max 1.7)V
Continuous forward current per leg at Tc=25°C 30A
Continuous forward current per leg at Tc=135°C 15.2A
Total capacitive charge Qc at VR=800 V, Tj=25°C 62nC
Total power dissipation Ptot at Tc=25°C per leg 176W
Total power dissipation Ptot at Tc=150°C per leg 29W
Average forward current IF(AV) per leg at Tc=155°C 10A
Thermal resistance junction‑to‑case Rth(j‑c) per leg 0.85K/W
Repetitive peak forward current IFRM (0.1 Hz, 100 cycles, 10 ms) per leg 56A
Non‑repetitive surge forward current IFSM (10 ms, sine, Tc=25°C) per leg 72A

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