DCP51-16-13
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Краткое описание:
PNP BJT Transistor, 1A Ic, 45V Vceo, SOT-223, 200MHz
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -1A and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 200MHz. Housed in a 4-pin plastic SOT-223 surface mount package. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.000282oz |
| hFE Min | 25 |
| Polarity | PNP |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | -45V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
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