DCP68-25-13
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Краткое описание:
NPN BJT Transistor, 1A I(C), 20V V(CEO), 330MHz, SOT-223
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a 1A maximum collector current and 20V collector-emitter breakdown voltage. Operates with a 330MHz transition frequency and a 500mV collector-emitter saturation voltage. Packaged in a surface-mount SOT-223 plastic package, this component offers a 1W power dissipation and operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 330MHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 330MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 330MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 5V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 500mV |
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