DCX143TU-7-F

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DCX143TU-7-F - Diodes
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Краткое описание: NPN/PNP BJT, 50V, 100mA, 250MHz, SOT-363
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual NPN/PNP silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 200mW. Packaged in a compact SOT-363 surface-mount plastic package, this RoHS compliant component offers a transition frequency of 250MHz.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 100
Polarity NPN, PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-363
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 3000
Number of Channels 2
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 200mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V

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