DDA143TU-7-F
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PNP BJT Transistor, 50V, 100mA, 250MHz, SOT-363
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 50V Collector Emitter Breakdown Voltage (VCEO) and a continuous collector current of -100mA. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. This surface mount device is housed in a 6-pin SOT-363 plastic package, offering a transition frequency of 250MHz and a minimum hFE of 100. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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