DDTA123ECA-7-F
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PNP BJT Transistor, 50V, 100mA, 250MHz, SOT-23-3
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector Emitter Breakdown Voltage and a maximum continuous collector current of -100mA. Operates with a maximum collector-emitter saturation voltage of 300mV and an emitter-base voltage of -3V. This silicon transistor boasts a transition frequency of 250MHz and a minimum hFE of 20. Housed in a 3-lead SOT-23 plastic package for surface mounting, it offers a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 20 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -3V |
| Continuous Collector Current | -100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 50V |
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