DDTA124ECA-7-F

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DDTA124ECA-7-F - Diodes
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Краткое описание: PNP BJT Transistor, 50V, 100mA, 250MHz, SOT-23-3
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 50V Collector Emitter Breakdown Voltage and a 100mA Continuous Collector Current. This surface mount component is housed in a 3-lead SOT-23-3 plastic package. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 200mW. Includes a minimum hFE of 56 and a transition frequency of 250MHz.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
hFE Min 56
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Current Rating -100mA
RoHS Compliant Yes
DC Rated Voltage -50V
Package Quantity 3000
Max Output Current 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 200mW
Operating Supply Voltage 50V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 300mV
Collector Emitter Breakdown Voltage 50V

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