DDTC113TE-7-F
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NPN BJT Transistor, 50V, 100mA, 250MHz, SOT-523
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. Operates with a maximum power dissipation of 150mW and a transition frequency of 250MHz. Packaged in a compact SOT-523 surface mount plastic package, this component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.8mm |
| Height | 0.75mm |
| Length | 1.6mm |
| Weight | 7.1E-05oz |
| hFE Min | 100 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-523 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 50V |
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