DDTC115GCA-7-F
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NPN BJT Transistor, 50V, 100mA, 250MHz, SOT-23-3
Дополнительная информация
NPN bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a continuous collector current of 100mA. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. This silicon transistor is housed in a 3-pin SOT-23 plastic package, suitable for surface mounting. Offers a minimum hFE of 82 and a transition frequency of 250MHz.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 82 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Max Output Current | 100mA |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 50V |
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