DDTD123TC-7-F

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DDTD123TC-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 40V VCEO, 500mA IC, 200MHz, SOT-23-3
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN silicon bipolar junction transistor for surface mounting in a 3-lead SOT-23 plastic package. Features a 40V collector-emitter voltage (VCEO), 500mA continuous collector current, and a 200MHz transition frequency. Offers a minimum DC current gain (hFE) of 100 and operates across a temperature range of -55°C to +150°C. This RoHS compliant component is supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
hFE Min 100
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Radiation Hardening No
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Max Collector Current 500mA
Max Power Dissipation 200mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 500mA
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 50V

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