DDTD142JC-7-F
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NPN BJT Transistor, 50V, 500mA, 200MHz, SOT-23
Дополнительная информация
NPN bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a maximum collector-emitter saturation voltage of 300mV and a minimum hFE of 56. This silicon transistor is housed in a 3-pin SOT-23 surface-mount plastic package and is RoHS compliant. Transition frequency reaches 200MHz.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 56 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 500mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
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