DDTD142TC-7-F
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NPN BJT Transistor, 40V VCEO, 500mA IC, 200MHz, SOT-23-3
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a 40V collector-emitter voltage (VCEO) and 50V collector emitter breakdown voltage. Offers a continuous collector current of 500mA and a minimum hFE of 100. Packaged in a 3-lead SOT-23 surface mount plastic package. Operates within a temperature range of -55°C to 150°C. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 100 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 50V |
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