DJT4030P-13
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Краткое описание:
PNP BJT Transistor, 40V VCEO, 3A IC, 150MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -3A. Offers a minimum DC current gain (hFE) of 220 and a transition frequency of 150MHz. Packaged in a SOT-223 plastic case, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.2W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.000282oz |
| hFE Min | 220 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Max Frequency | 150MHz |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.2W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -3A |
| Collector Base Voltage (VCBO) | -40V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -150mV |
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