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Краткое описание:
N/P-Channel JFET, 20V, 670mA, SOT-563, Surface Mount
Дополнительная информация
Dual-element, N-channel and P-channel silicon Metal-oxide Semiconductor FET for surface mounting. Features 20V drain-source voltage, 670mA continuous drain current, and 400mΩ drain-source resistance. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 400mW. Packaged in a compact SOT-563 plastic package, measuring 1.6mm x 1.2mm x 0.6mm. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.6mm |
| Weight | 0.000106oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 550mR |
| Package/Case | SOT-563 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 150pF |
| Power Dissipation | 1W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 400mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 670mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 900mR |
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