DMC2990UDJ-7
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Краткое описание:
N/P-Channel JFET, 20V, 310mA, SOT-963, Surface Mount
Дополнительная информация
Dual-element N-channel and P-channel silicon FET for surface mount applications. Features 20V drain-source voltage (Vdss), 310mA continuous drain current (ID), and 990mΩ maximum drain-source on-resistance (Rds On). Operates from -55°C to 150°C with a maximum power dissipation of 350mW. Packaged in an ultra-small SOT-963 plastic package, this RoHS compliant component offers fast switching with turn-on delay of 5.8ns and fall time of 16.4ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.85mm |
| Height | 0.45mm |
| Length | 1.05mm |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 16.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 990mR |
| Package/Case | SOT-963 |
| RoHS Compliant | Yes |
| Package Quantity | 10000 |
| Input Capacitance | 27.6pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 5.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 31.1ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 350mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.9R |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 310mA |
| Drain to Source Voltage (Vdss) | 20V |
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