DMC3025LSD-13
Производится
Увеличить
Краткое описание:
N/P-Channel JFET, 30V, 4.2A ID, 20mR RdsOn, SOP-8
Дополнительная информация
Dual N-Channel and P-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features 30V Drain to Source Voltage (Vdss) and 4.2A Continuous Drain Current (ID). Offers low Drain to Source Resistance (Rds On Max) of 20mR. Packaged in a surface-mount SOP-8 case with dimensions of 4.95mm length, 3.95mm width, and 1.5mm height. Operates from -55°C to 150°C and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 1.5mm |
| Length | 4.95mm |
| Weight | 0.00261oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 12.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 501pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 6.8ns |
| Turn-Off Delay Time | 28.4ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 38mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
