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P-Channel JFET, 20V, 820mA ID, 750mR Rds(on), SOT-323
Дополнительная информация
P-channel, single-element silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a continuous drain current of 820mA and a drain-source voltage of 20V. Offers a maximum drain-source on-resistance of 750mΩ. Packaged in a SOT-323 surface-mount plastic package, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| Polarity | P-CHANNEL |
| Fall Time | 20.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 750mR |
| Package/Case | SOT-323 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 59.76pF |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 5.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28.4ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 310mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 820mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 750mR |
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