DMG1016UDW-7
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N/P-Channel JFET, 20V, 845mA ID, 450mR Rds(on), SOT-363
Дополнительная информация
Surface mount N-channel and P-channel dual JFET with 20V Drain to Source Voltage (Vdss) and 845mA Continuous Drain Current (ID). Features low Drain-source On Resistance (Rds On) up to 450mR, ideal for small signal applications. Operates across a wide temperature range from -55°C to 150°C. Packaged in an ultra-small SOT-363 plastic package, this RoHS compliant component offers fast switching speeds with turn-on delay times as low as 5.1ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 12.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 450mR |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 60.67pF |
| Power Dissipation | 330mW |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 5.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26.7ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 330mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.05R |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 845mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 750mR |
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