DMG1016V-7
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Краткое описание:
N/P-Ch JFET, 20V, 640mA ID, SOT-563, SM
Дополнительная информация
Dual N-Channel and P-Channel JFET for small signal applications. Features 20V drain-source voltage (Vdss) and 640mA continuous drain current (ID). Offers low drain-source on-resistance (Rds On) of 400mR maximum. Operates across a wide temperature range from -55°C to 150°C. Packaged in an ultra-small SOT-563 surface-mount plastic package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Weight | 0.000106oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 20.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 400mR |
| Package/Case | SOT-563 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 60.67pF |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 5.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28.4ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 530mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.3R |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 640mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 700mR |
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