DMG1023UV-7
Производится
Увеличить
Краткое описание:
P-CH MOSFET 20V 1.03A SOT-563 Dual Enhancement
Дополнительная информация
P-channel enhancement mode MOSFET, dual configuration, in a 6-pin SOT-563 surface-mount package. Features a maximum drain-source voltage of 20V and a continuous drain current of 1.03A. Offers a low drain-source on-resistance of 750mOhm at 4.5V gate-source voltage. Operates across a temperature range of -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Flat |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | SOT-563 |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.2 |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 0.6 |
| Package Length (mm) | 1.6 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.6 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 530mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±6V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 59.76@16VpF |
| Maximum Continuous Drain Current | 1.03A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
