DMG1029SV-7
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Краткое описание:
N/P-Channel JFET, 60V, 500mA ID, 1.7R Rds(on), SOT-563
Дополнительная информация
N-Channel and P-Channel Silicon FET, designed for small signal applications. Features a 60V Drain to Source Voltage (Vdss) and a maximum continuous drain current of 500mA. Offers a low Drain-source On Resistance (Rds On) of 1.7 Ohms. Packaged in an ultra-small, 6-lead SOT-563 plastic package for surface mounting. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Weight | 0.000106oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 11.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.7R |
| Package/Case | SOT-563 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 30pF |
| Threshold Voltage | 2.5V |
| Number of Channels | 2 |
| Turn-On Delay Time | 5.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 450mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 4R |
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