DMG2301U-7
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Краткое описание:
P-Channel JFET, 20V, 2.7A ID, 80mR RDS(on), SOT-23-3
Дополнительная информация
P-Channel, Silicon, Metal-oxide Semiconductor FET for small signal applications. Features a 20V Drain to Source Voltage (Vdss) and 2.7A Continuous Drain Current (ID). Offers low Drain to Source Resistance (Rds On Max) of 130mR. Packaged in a 3-pin SOT-23-3 surface mount plastic package. Operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 22.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 130mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 608pF |
| Power Dissipation | 800mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46.5ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 20V |
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