DMG2307L-7
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Краткое описание:
P-Channel JFET, 30V, 2.5A ID, 90mR Rds On, SOT-23
Дополнительная информация
P-Channel, Silicon, Metal-oxide Semiconductor FET for small signal applications. Features 30V Drain to Source Voltage (Vdss) and 2.5A Continuous Drain Current (ID). Offers low 90mR Drain to Source Resistance (Rds On Max) and fast switching times with 4.8ns Turn-On Delay and 13.4ns Fall Time. Packaged in a compact SOT-23 surface mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 13.4ns |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 371.3pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22.4ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 760mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 30V |
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