DMG3401LSN-7

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DMG3401LSN-7 - Diodes
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Краткое описание: 30V 3A P-Channel MOSFET, 50mR Rds(on), SC Package
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel silicon MOSFET, a single-element field-effect transistor designed for surface mounting. Features a 30V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 3A. Offers low on-resistance with Rds On Max at 50mR and Drain to Source Resistance at 85mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.2W. Includes fast switching characteristics with turn-on delay time of 8ns and fall time of 38ns. This component is RoHS and Lead Free compliant.
RoHS Compliant
Mount Surface Mount
Weight 0.000282oz
Polarity P-CHANNEL
Fall Time 38ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 50mR
Package/Case SC
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 1.326nF
Power Dissipation 1.2W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 8ns
Turn-Off Delay Time 71ns
Reach SVHC Compliant Yes
Max Power Dissipation 800mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 85mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 3A
Drain to Source Voltage (Vdss) 30V

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