DMG3413L-7

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DMG3413L-7 - Diodes
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Краткое описание: P-CHANNEL JFET, 3A, 20V, 190mR, TO-236-3, Surface Mount
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

The DMG3413L-7 is a P-channel junction field-effect transistor with a maximum operating temperature range of -55°C to 150°C. It features a maximum power dissipation of 700mW and a drain to source resistance of 190mR. The transistor is packaged in a TO-236-3 surface mount package and is lead-free and RoHS compliant. It has a maximum continuous drain current of 3A and a gate to source voltage of 8V.
RoHS Compliant
Mount Surface Mount
Weight 0.000282oz
Polarity P-CHANNEL
Fall Time 64.2ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 95mR
Package/Case TO-236-3
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 857pF
Turn-On Delay Time 9.7ns
Radiation Hardening No
Turn-Off Delay Time 268.8ns
Reach SVHC Compliant No
Max Power Dissipation 700mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 190mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 3A
Drain to Source Voltage (Vdss) 20V

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