DMG3414U-7
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N-Channel MOSFET, 20V, 4.2A ID, 25mR Rds On, SOT-23-3
Дополнительная информация
N-Channel MOSFET, 20V Drain-Source Voltage (Vdss), 4.2A Continuous Drain Current (ID), and 25mΩ Max Drain-Source On Resistance (Rds On). Features include 8.1ns Turn-On Delay Time, 9.6ns Fall Time, and 40.1ns Turn-Off Delay Time. This single-element, silicon Metal-oxide Semiconductor FET is housed in a 3-pin SOT-23-3 surface-mount plastic package. Operating temperature range is -55°C to 150°C with a Max Power Dissipation of 780mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 9.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 829.9pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.1ns |
| Turn-Off Delay Time | 40.1ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 780mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 25mR |
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