DMG3415U-7
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Краткое описание:
P-Channel JFET, 4A ID, -20V Vdss, SOT-23, Surface Mount
Дополнительная информация
P-channel silicon MOSFET for surface mount applications. Features a continuous drain current of 4A and a drain-source voltage of -20V. Offers a low drain-source on-resistance of 39mR (max) and a threshold voltage of -550mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 900mW. Packaged in a SOT-23 plastic package, this component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 393ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 39mR |
| Nominal Vgs | -550mV |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 294pF |
| Power Dissipation | 900mW |
| Threshold Voltage | -550mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 71ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 795ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 42.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 42.5mR |
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