DMG4466SSS-13
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N-Channel MOSFET, 30V, 10A, 23mR RdsOn, SOIC
Дополнительная информация
N-Channel Power MOSFET, 30V Vdss, 10A Continuous Drain Current (ID), and 23mΩ Rds On Max. This single-element silicon Metal-Oxide-Semiconductor FET features a 1.42W maximum power dissipation and operates across a wide temperature range from -55°C to 150°C. Designed for surface mounting, it is packaged in a green, plastic SOP-8 (SOIC) case, supplied on tape and reel. Key switching characteristics include a 2.9ns turn-on delay and 3.1ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 1.5mm |
| Length | 4.95mm |
| Weight | 0.00261oz |
| Polarity | N-CHANNEL |
| Fall Time | 3.1ns |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 478.9pF |
| Power Dissipation | 1.42W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.42W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 33mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 30V |
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