DMG4468LFG-7
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Краткое описание:
N-CH MOSFET 30V 7.62A DFN EP 8-Pin SMT
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 7.62A continuous drain current. This surface-mount device is housed in an 8-pin DFN EP package with a 3x3mm footprint and 0.65mm pin pitch. Key specifications include a maximum drain-source on-resistance of 15mΩ at 10V, typical gate charge of 18.85nC at 10V, and typical input capacitance of 867pF at 10V. Maximum power dissipation is 990mW, with an operating temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541210095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DFN EP |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 3 |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Package Family Name | DFN |
| Package Height (mm) | 0.58 |
| Package Length (mm) | 3 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.6 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 990mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 18.85nC |
| Typical Gate Charge @ Vgs | 18.85@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 15@10VmOhm |
| Typical Input Capacitance @ Vds | 867@10VpF |
| Maximum Continuous Drain Current | 7.62A |
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