DMG4468LK3-13
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Краткое описание:
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 0.139332oz |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 6.01ns |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 867pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 5.46ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18.84ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.68W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.7A |
| Drain to Source Voltage (Vdss) | 30V |
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