DMG4496SSS-13
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 30V, 10A, 21.5mR Rds(on), SOIC
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a 30V Drain-to-Source Voltage (Vdss) and a continuous Drain Current (ID) of 10A. Offers a low Drain-to-Source On-Resistance (Rds On) of 21.5mΩ at a specified gate-source voltage. This single-element transistor is housed in a green, plastic SOP-8 package for surface mounting. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.42W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 1.5mm |
| Length | 4.95mm |
| Weight | 0.00261oz |
| Polarity | N-CHANNEL |
| Fall Time | 4.9ns |
| Packaging | Tape and Reel |
| Rds On Max | 21.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 493.5pF |
| Power Dissipation | 1.42W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 4.76ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19.5ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.42W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
