DMG4511SK4-13

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DMG4511SK4-13 - Diodes
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Краткое описание: N/P-Channel MOSFET, 35V, 5A, 65mR, TO-252, SMT
Производитель Diodes
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N and P-Channel MOSFET featuring 35V Drain to Source Voltage (Vdss) and 5A Continuous Drain Current (ID). Surface mount TO-252-5 package with 65mR Drain to Source Resistance. Operates from -55°C to 150°C with a maximum power dissipation of 1.54W. Includes fast switching characteristics with turn-on delay of 5.4ns and fall time of 35.6ns. Packaged in tape and reel for efficient assembly.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.39mm
Length 6.7mm
FET Type N and P-Channel
Polarity N-CHANNEL, P-CHANNEL
Fall Time 35.6ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 35mR
Package/Case TO-252-5
Package Quantity 2500
Input Capacitance 850pF
Number of Channels 2
Turn-On Delay Time 5.4ns
Turn-Off Delay Time 33.2ns
Reach SVHC Compliant Yes
Max Power Dissipation 1.54W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 65mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 35V

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