DMG4800LK3-13

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DMG4800LK3-13 - Diodes
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Краткое описание: N-Channel MOSFET, 30V, 10A, 17mR, TO-252-3
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 30V drain-source voltage, 10A continuous drain current, and 17mΩ maximum drain-source resistance. Features include 5.03ns turn-on delay, 8.55ns fall time, and 26.33ns turn-off delay. This surface-mount component operates within a -55°C to 150°C temperature range and has an input capacitance of 798pF. Packaged in a TO-252-3 plastic case, it is RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Weight 0.139332oz
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 8.55ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 17mR
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 798pF
Number of Channels 2
Turn-On Delay Time 5.03ns
Radiation Hardening No
Turn-Off Delay Time 26.33ns
Reach SVHC Compliant Yes
Max Power Dissipation 1.71W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 12mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 10A
Drain to Source Voltage (Vdss) 30V

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