DMG4800LSD-13
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N-Channel MOSFET, 30V, 7.5A, 16mΩ, 2-Element, SOIC
Дополнительная информация
N-Channel Power MOSFET, featuring 30V Drain-Source Voltage and 7.5A Continuous Drain Current. This surface-mount device offers a low 16mΩ Drain-Source On-Resistance and a threshold voltage of 1.6V. With a 2-element configuration and 2 N-Channel FETs, it boasts fast switching characteristics including a 5.03ns turn-on delay and 8.55ns fall time. Housed in a green, plastic SOP-8 package, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 1.5mm |
| Length | 4.95mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8.55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 798pF |
| Threshold Voltage | 1.6V |
| Number of Channels | 2 |
| Turn-On Delay Time | 5.03ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26.33ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.17W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 30V |
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