DMG6402LVT-7
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Краткое описание:
N-Ch MOSFET, 30V, 6A, 30mR, TSOT, SMT
Дополнительная информация
N-Channel MOSFET, a surface-mount electronic component in a TSOT package, offers a continuous drain current of 6A and a low drain-to-source on-resistance (Rds On) of 30mR. Featuring a drain-to-source voltage (Vdss) of 30V and a gate-to-source voltage (Vgs) of 20V, this single-channel transistor exhibits fast switching characteristics with a fall time of 2.8ns. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 1.75W and an input capacitance of 498pF. The component is supplied in tape and reel packaging and is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.9mm |
| Length | 2.9mm |
| Polarity | N-CHANNEL |
| Fall Time | 2.8ns |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| Package/Case | TSOT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 498pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 3.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13.9ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.75W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 30V |
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