DMG6601LVT-7
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Краткое описание:
Dual N/P-CH MOSFET 30V 3.8A/2.5A TSOT-26 SMT
Дополнительная информация
Dual N/P-channel enhancement mode power MOSFET in a 6-pin TSOT-26 package. Features a maximum drain-source voltage of 30V, with continuous drain currents of 3.8A for the N-channel and 2.5A for the P-channel. Offers low on-resistance with a maximum of 55mΩ (N-channel) and 110mΩ (P-channel) at 10V Vgs. Surface-mount design with gull-wing leads and a compact footprint measuring 2.9mm x 1.6mm.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | TSOT-26 |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.6 |
| Package Description | Thin Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 0.9(Max) |
| Package Length (mm) | 2.9 |
| Seated Plane Height (mm) | 1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1300mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 5.4@Q 1|6.5@Q 2nC |
| Typical Gate Charge @ Vgs | [email protected]|12.3@10V@Q 1|[email protected]|13.8@10V@Q 2nC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 1.5@Q 1|1.2@Q 2V |
| Maximum Drain Source Resistance | 55@10V@Q 1|110@10V@Q 2mOhm |
| Typical Input Capacitance @ Vds | 422@15V@Q 1|541@15V@Q 2pF |
| Maximum Continuous Drain Current | 3.8@N Channel|2.5@P ChannelA |
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