DMG6968UDM-7
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Краткое описание:
N-Ch JFET, 20V, 6.5A ID, 24mR RdsOn, SOT-26
Дополнительная информация
Surface mount N-channel silicon Metal-oxide Semiconductor FET with 2 elements, offering a continuous drain current of 6.5A and a drain-source voltage of 20V. Features a low drain-source on-resistance of 24mR, input capacitance of 143pF, and operating temperatures from -55°C to 150°C. This device is packaged in a compact SOT-26 plastic package, measuring 3mm in length, 1.6mm in width, and 1.1mm in height, and is supplied on tape and reel. It is RoHS and Lead Free compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 3mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 234ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| Package/Case | SOT-26 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 143pF |
| Power Dissipation | 850mW |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 53ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 562ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 850mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 24mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 24mR |
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