DMG8822UTS-13
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Краткое описание:
2-Ch N-Ch JFET, 20V, 4.9A ID, 19mR RdsOn, TSSOP
Дополнительная информация
Dual N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a TSSOP package. Features a continuous drain current of 4.9A and a drain-to-source voltage of 20V. Offers a low drain-to-source on-resistance (Rds On) of 19mΩ at a gate-to-source voltage of 8V. Exhibits fast switching characteristics with turn-on delay time of 7.8ns and fall time of 10.1ns. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 870mW. This component is RoHS and REACH SVHC compliant, and AEC-Q101 qualified for automotive applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | Automotive, AEC-Q101 |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10.1ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 841pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 7.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38.6ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 870mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Voltage (Vdss) | 20V |
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