DMG9926UDM-7
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Краткое описание:
2-Ch N-Ch JFET, 20V, 4.2A ID, SOT-26, SM
Дополнительная информация
N-Channel, 2-Element, Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 20V Drain to Source Voltage (Vdss) and 4.2A Continuous Drain Current (ID). Offers low Drain to Source Resistance of 22mR and a maximum power dissipation of 980mW. Packaged in a compact SOT-26 surface mount plastic package, this device operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1.3mm |
| Length | 3.1mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Package/Case | SOT-26 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 856pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 8.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40.4ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 980mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 20V |
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