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N-Channel MOSFET, 20V, 8A, 24mR Rds On, SOP
Дополнительная информация
N-Channel Power MOSFET, featuring 20V Drain-Source Voltage (Vdss) and 8A Continuous Drain Current (ID). This surface-mount device offers a low 24mΩ Drain-Source On-Resistance (Rds On Max). It includes two N-Channel elements with a Gate-Source Voltage (Vgs) of 8V and exhibits a turn-on delay of 13.2ns and fall time of 21.7ns. Operating within a temperature range of -55°C to 150°C, this RoHS compliant component is housed in a green, plastic SOP package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 1.5mm |
| Length | 4.95mm |
| Weight | 0.030018oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 21.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| Package/Case | SOP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 867pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 13.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 64.8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 24mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 24mR |
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