DMJT9435-13
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Краткое описание:
PNP BJT Transistor, 3A I(C), 30V V(BR)CEO, SOT-223, SM
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 30V. Offers a transition frequency of 160MHz and a maximum power dissipation of 1.2W. Packaged in a 4-pin SOT-223 surface mount plastic package, this component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 160MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 160MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.2W |
| Gain Bandwidth Product | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 45V |
| Collector-emitter Voltage-Max | 550mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -550mV |
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