DMMT3906W-7-F
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PNP BJT Transistor, 40V, 200mA, 250MHz, SOT-363
Дополнительная информация
PNP silicon bipolar junction transistor featuring a 40V collector-emitter breakdown voltage and a continuous collector current of 200mA. This surface mount device, housed in a SOT-363 package, offers a gain bandwidth product of 250MHz and a maximum power dissipation of 200mW. Operating across a temperature range of -55°C to 150°C, it includes two elements and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Max Frequency | 250MHz |
| Current Rating | -200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -200mA |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
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