DMMT5551-7-F
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NPN BJT Transistor, 160V VCEO, 200mA IC, 300MHz, SOT-26
Дополнительная информация
NPN silicon bipolar junction transistor in a SOT-26 surface mount plastic package. Features a 160V collector-emitter breakdown voltage (VCEO), 200mA maximum collector current (IC), and 200mV collector-emitter saturation voltage. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 300MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.001058oz |
| hFE Min | 80 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-26 |
| Max Frequency | 300MHz |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 180V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 180V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
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