DMN1150UFB-7B
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Краткое описание:
N-Channel JFET, 12V, 1.41A ID, 150mR Rds(on), DFN
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, surface mountable in a compact X1-DFN1006-3 package. Features a continuous drain current of 1.41A, 12V drain-to-source voltage, and 150mΩ drain-to-source resistance. Offers fast switching with a 4.1ns turn-on delay and 57ns turn-off delay, alongside a 30ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 500mW. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.675mm |
| Height | 0.48mm |
| Length | 1.08mm |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 10000 |
| Input Capacitance | 106pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 57ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 1.41A |
| Drain to Source Voltage (Vdss) | 12V |
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