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N-Channel JFET, 20V, 540mA ID, 550mR RDS(on), SOT-563
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, featuring two elements and a 20V Drain to Source Voltage (Vdss). This surface mount transistor offers a continuous drain current (ID) of 540mA and a maximum drain-source on-resistance (Rds On Max) of 550mR. Operating across a temperature range of -65°C to 150°C, it boasts a maximum power dissipation of 250mW. The ultra-small SOT-563 package measures 1.6mm in length, 1.2mm in width, and 0.6mm in height, ideal for compact designs.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.6mm |
| Weight | 0.000106oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 36.1ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 550mR |
| Package/Case | SOT-563 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 150pF |
| Power Dissipation | 250mW |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 53.5ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 540mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 550mR |
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