DMN2005DLP4K-7
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Краткое описание:
2-Ch N-Ch JFET, 20V, 300mA ID, 1.5R RdsOn, DFN
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, a 2-element, 2-channel JFET designed for surface mount applications. Features a 20V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 300mA. Offers a low Drain to Source Resistance (Rds On) of 1.5 Ohms. Packaged in an ultra-small DFN1310H4, 6-pin plastic package, this component operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 400mW. It is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1mm |
| Height | 0.35mm |
| Length | 1.3mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.5R |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 400mW |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 400mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Voltage (Vdss) | 20V |
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