DMN2013UFDE-7
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Краткое описание:
N-Channel MOSFET, 20V, 10.5A ID, 8.4mR Rds(on), DFN
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mount applications. Features a 20V Drain-to-Source Voltage (Vdss) and a continuous Drain Current (ID) of 10.5A. Offers a low Drain-to-Source On-Resistance (Rds On) of 8.4mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 660mW. Packaged in a compact U-DFN2020-6 plastic housing, this 1-element FET is RoHS compliant and suitable for high-density designs.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.58mm |
| Length | 2.05mm |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 20.8ns |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.453nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 9.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 66.4ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 660mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.4mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Voltage (Vdss) | 20V |
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