DMN2015UFDE-7
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Краткое описание:
N-Ch MOSFET, 20V, 10.5A ID, 9.3mR Rds On, DFN
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element field-effect transistor designed for surface mounting. Features a 20V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 10.5A. Offers a low Drain to Source Resistance (Rds On) of 9.3mR, with a maximum of 11.6mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 660mW. Packaged in a 2.05mm x 2.05mm x 0.58mm U-DFN2020-6 package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.58mm |
| Length | 2.05mm |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11.6mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.779nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 7.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43.6ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 660mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.3mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Voltage (Vdss) | 20V |
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