DMN2016LFG-7
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Краткое описание:
N-Channel JFET, 20V, 5.2A, 18mR, DFN, Surface Mount
Дополнительная информация
N-Channel Metal-oxide Semiconductor FET, a surface mount device in a DFN package, offers a Drain to Source Voltage (Vdss) of 20V and a continuous Drain Current (ID) of 5.2A. Featuring a low Drain-source On Resistance (Rds On Max) of 18mR, this component boasts fast switching speeds with a Turn-On Delay Time of 2.6ns and a Fall Time of 46.8ns. Operating across a temperature range of -55°C to 150°C, it provides a Gate to Source Voltage (Vgs) of 8V and an Input Capacitance of 1.472nF. This RoHS and REACH SVHC compliant transistor is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 46.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.472nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 2.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 84.5ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 770mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 18mR |
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