DMN2016UTS-13
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Краткое описание:
N-CH MOSFET 20V 8.58A 8-Pin TSSOP Dual Common Drain/Source
Дополнительная информация
N-channel enhancement mode Power MOSFET featuring a dual common drain, dual source configuration. This surface-mount transistor operates with a maximum drain-source voltage of 20V and a continuous drain current of 8.58A. It is housed in an 8-pin TSSOP package with gull-wing leads, measuring 3.01mm x 4.43mm x 0.93mm. Key electrical characteristics include a maximum drain-source on-resistance of 14.5 mOhm at 4.5V and a typical gate charge of 16.5 nC at 4.5V.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541210095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TSSOP |
| AEC Qualified | No |
| Configuration | Dual Common Drain Dual Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4.43 |
| Package Description | Thin Shrink Small Outline Package |
| Package Family Name | SOP |
| Package Height (mm) | 0.93 |
| Package Length (mm) | 3.01 |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 880mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±8V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 1495@10VpF |
| Maximum Continuous Drain Current | 8.58A |
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